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A43L8316V-10 - 128K X 16 Bit X 2 Banks Synchronous DRAM

A43L8316V-10_164493.PDF Datasheet


 Full text search : 128K X 16 Bit X 2 Banks Synchronous DRAM


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PART Description Maker
A43L8316AV-7 A43L8316A A43L8316AV A43L8316AV-5 A43 128K X 16 Bit X 2 Banks Synchronous DRAM
AMICC[AMIC Technology]
W981216BH W981216 W981216BH-75 W981216BH-75I W9812 2M x 4 Banks x 16 Bit SDRAM
Low Power SDRAM
Industrial SDRAM
2M x 4 BANKS x 16 BIT SDRAM
DRAM - Datasheet Reference
Winbond Electronics Corp
WINBOND[Winbond]
28LV011RPFB-25 28LV011RPFE-25 28LV011RT1FE-25 28LV 3.3V 1 Megabit (128K x 8-Bit) EEPROM 3.3V兆位28K的8位)的EEPROM
PN Series Box Enclosure; NEMA Type:1, 2, 4, 4X, 12, 13; Enclosure Material:Polycarbonate; External Height:3.54"; External Width:6.3"; External Depth:9.45"; Enclosure Color:Gray 128K X 8 EEPROM 3V, 200 ns, DFP32
3.3V 1 Megabit (128K x 8-Bit) EEPROM 3.3V兆位28K的8位)EEPROM
3.3V 1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 3V, 200 ns, DFP32
Maxwell Technologies, Inc
CY62137CVSL-70BVI CY62137CV CY62137CV25 CY62137CV2 Very high speed: 55 ns and 70 ns
(CY62137CV25 / CY62137CV30 / CY62137CV33) 2M (128K x 16) Static RAM
32-Bit Transparent D-Type Latch with 3-State Outputs 96-LFBGA -40 to 85
2M (128K x 16) Static RAM 128K X 16 STANDARD SRAM, 55 ns, PBGA48
2M (128K x 16) Static RAM 128K X 16 STANDARD SRAM, 70 ns, PBGA48
CYPRESS[Cypress Semiconductor]
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
72SD3232RPFE 72SD3232RPFI 72SD3232RPFK 72SD3232RPF 1 Gbit SDRAM 32-Meg X 32-Bit X 4-Banks 32M X 32 SYNCHRONOUS DRAM, 6 ns, DFP72
1 Gbit SDRAM 32-Meg X 32-Bit X 4-Banks 1千兆位SDRAM2梅格× 32位4,银
http://
Maxwell Technologies, Inc
LTC1876 High Efficiency, 2-Phase, Synchr., Dual, Step-Down Sw. Contr. W/ Step-Up Reg.
Linear
UPD431000AGU-70LL-9JH UPD431000AGU-70LL-9KH UPD431 1M-bit (128K-word by 8-bit) CMOS static RAM, 70ns
1M-bit (128K-word by 8-bit) CMOS static RAM, 100ns
1M-bit (128K-word by 8-bit) CMOS static RAM, 120ns
1M-bit (128K-word by 8-bit) CMOS static RAM, 150ns
NEC
AS7C31025B AS7C31025B-20TJIN AS7C31025B-10JC AS7C3 SRAM - 3.3V Fast Asynchronous
128 x 64 pixel format, LED or EL Backlight available
8-Bit Parallel-Load Shift Registers 16-TVSOP -40 to 85
8-Bit Parallel-Load Shift Registers 16-SSOP -40 to 85
8-Bit Parallel-Load Shift Registers 16-SOIC -40 to 85
3.3V 128K X 8 CMOS SRAM (Center power and ground) 128K X 8 STANDARD SRAM, 15 ns, PDSO32
3.3V 128K X 8 CMOS SRAM (Center power and ground) 128K X 8 STANDARD SRAM, 10 ns, PDSO32
Alliance Semiconductor ...
ALSC[Alliance Semiconductor Corporation]
Alliance Semiconductor, Corp.
MT47H32M16HR-25E MT47H64M8CF-25EG DDR2 SDRAM MT47H128M4 ?32 Meg x 4 x 4 banks MT47H64M8 ?16 Meg x 8 x 4 banks MT47H32M16 ?8 Meg x 16 x 4 banks
Micron Technology
MX28F1000PRI-70 MX28F1000PQI-70 MX28F1000PRC-90C4 1M-BIT [128K x 8] CMOS FLASH MEMORY 128K X 8 FLASH 12V PROM, 70 ns, PDIP32
1M-BIT [128K x 8] CMOS FLASH MEMORY 128K X 8 FLASH 12V PROM, 90 ns, PDSO32
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Macronix International Co., Ltd.
MCM63D736 128K x 36 Bit Synchronous Dual I/O, Dual Address SRAM(128K x 36 Bit同步双I/O双地址静态存储器)
Motorola, Inc.
 
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A43L8316V-10 Controller A43L8316V-10 filter A43L8316V-10 vsen gate A43L8316V-10 описание A43L8316V-10 替换表
A43L8316V-10 heatsink A43L8316V-10 Controller A43L8316V-10 Collector A43L8316V-10 mosfet A43L8316V-10 bookmark
 

 

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